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Samsung to Use TSMC 3nm Process for Nvidia Next-Gen HBM Chips
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Firstpost•19-10-2026, 02:14
Samsung to Use TSMC 3nm Process for Nvidia Next-Gen HBM Chips
- •Samsung will reportedly use TSMC's 3nm process to produce base dies for Nvidia's next-generation custom high-bandwidth memory chips.
- •This collaboration marks the first time Samsung has partnered with TSMC at the HBM manufacturing stage.
- •Nvidia has asked major memory makers including Samsung, SK Hynix and Micron to utilize TSMC's process for NVHBM base dies.
- •Samsung plans to retain its in-house production model for standard HBM and custom products made for other clients.
- •Industry executives warn that advanced chip capacity constraints could impact ambitious AI infrastructure investments.
Key Questions Answered
Samsung will use TSMC’s 3nm process to produce base dies for Nvidia’s next-generation custom high-bandwidth memory chips, marking the first time Samsung has partnered with the Taiwanese contract chipmaker at the HBM manufacturing stage.
Nvidia has asked Samsung, SK Hynix, and Micron Technology to use TSMC’s process for the base dies of its NVHBM chips, alongside sixth-generation DRAM technology for the memory dies.
Unveiled in August, NVHBM integrates Nvidia’s custom memory controller into the base die to standardize implementation across multiple memory suppliers.
